RYOKO SUGANO

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 9:00 AM - 11:30 AM 313 (313)

Oral presentation
| 8 Plasma Electronics
| 8.4 Plasma etching

[17a-313-1~10] 8.4 Plasma etching

11:15 AM - 11:30 AM

[17a-313-10] Surface Reaction Analysis of SiN Etching with Hydrogen Radicals using MD Simulation

〇RYOKO SUGANO¹, MICHIRO ISOBE², SATOSHI HAMAGUCHI² (1.Hitachi R&D Group, 2.Osaka Univ.)