Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[17a-313-1~10] 8.4 Plasma etching

Fri. Mar 17, 2017 9:00 AM - 11:30 AM 313 (313)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[17a-313-1] Etching of amorphous carbon layer (a-C) by fluorine and fluorocarbon ions (F⁺, CF⁺, CF₃⁺)

〇Kazuhiro Karahashi¹, Hu Li¹, Kentaro Yamada¹, Tomoko Ito¹, Satoshi Numazawa², Ken Machida², Kiyoshi Ishikawa², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Samsung R&D Institute Japan)

9:15 AM - 9:30 AM

[17a-313-2] Syntheses of nano-crystals on Si substrates in etch process of CF₄/Ar plasmas

〇(M1)Gento Kuroda¹, Kazuo Takahashi¹, Koji Nishio¹ (1.Kyoto Inst. Technol.)

9:30 AM - 9:45 AM

△ [17a-313-3] Fluorocarbon radical behavior of synchronized dc-imposed pulsed plasmas for advanced dielectric etching processes

〇Toshinari Ueyama¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori², Manabu Iwata³, Yoshinobu Ohya³ (1.Nagoya Univ. Eng., 2.Nagoya Univ. Inst. Innovation for Future Society, 3.Tokyo Electron Miyagi Ltd.)

9:45 AM - 10:00 AM

△ [17a-313-4] Study on properties of hydrofluorocarbon gas plasma and etch performances of dielectric films

〇Naoki Takeda¹, Yan Zhang¹, Toshio Hayashi¹, Makoto Sekine¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji ishikawa¹, Masaru Hori² (1.Nagoya Univ. Eng., 2.Nagoya Univ. Inst. Innovation for Future Society)

10:00 AM - 10:15 AM

[17a-313-5] Effects of Additive Gases on Characteristics of Low Damage Plasma Etching
of GaN in Cl2 Based Plasma at High Temperature

〇Masato Imamura¹, Liu Zecheng¹, Pan Jialin¹, Nanide Atsushi³, Ishikawa Kenzi¹, Takeda Keigo¹, Kondo Hiroki¹, Oda Osamu¹, Sekine Makoto¹, Hori Masaru² (1.Nagoya Univ., 2.Nagoya Univ. Inst. Innovation for Future Society, 3.SCREEN Holdings)

10:15 AM - 10:30 AM

△ [17a-313-6] Ag film etching by using halogen gas plasma

〇Kenichi Yoshikawa¹, Atsuki Asano², Yudai Miyawaki², Kazuhito Furumoto¹, Toshiyuki Sasaki¹, Keisuke Kikutani¹, Hisataka Hayashi¹, Makoto Sekine², Masaru Hori² (1.Toshiba Corp., 2.Nagoya Univ.)

10:30 AM - 10:45 AM

[17a-313-7] Effects of He⁺ ion irradiation on the Etching of Transparent Conduction Oxides

〇HU LI¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony)

10:45 AM - 11:00 AM

△ [17a-313-8] First Principle Study on the Effects of Hydrogen on Transparent Conducting Oxide Etching

〇HU LI¹, Pascal Friederich², Karin Fink², Wolfgang Wenzel², Kazuhiro Karahashi¹, Masanaga Fukasawa³, Kazunori Nagahata³, Tetsuya Tatsumi³, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.KIT, 3.Sony)

11:00 AM - 11:15 AM

[17a-313-9] Fabrication of Ge Fin Structure by Neutral Beam Etching

〇Shuichi Noda¹, Wataru Mizubayashi², Akiou Kikuchi¹, Kazuhiko Endo², Seiji Samukawa^1,2 (1.Tohoku Univ., 2.AIST)

11:15 AM - 11:30 AM

[17a-313-10] Surface Reaction Analysis of SiN Etching with Hydrogen Radicals using MD Simulation

〇RYOKO SUGANO¹, MICHIRO ISOBE², SATOSHI HAMAGUCHI² (1.Hitachi R&D Group, 2.Osaka Univ.)

Session information

[17a-313-1~10] 8.4 Plasma etching

[17a-313-1] Etching of amorphous carbon layer (a-C) by fluorine and fluorocarbon ions (F⁺, CF⁺, CF₃⁺)

[17a-313-2] Syntheses of nano-crystals on Si substrates in etch process of CF₄/Ar plasmas

△ [17a-313-3] Fluorocarbon radical behavior of synchronized dc-imposed pulsed plasmas for advanced dielectric etching processes

△ [17a-313-4] Study on properties of hydrofluorocarbon gas plasma and etch performances of dielectric films

[17a-313-5] Effects of Additive Gases on Characteristics of Low Damage Plasma Etching
of GaN in Cl2 Based Plasma at High Temperature

△ [17a-313-6] Ag film etching by using halogen gas plasma

[17a-313-7] Effects of He⁺ ion irradiation on the Etching of Transparent Conduction Oxides

△ [17a-313-8] First Principle Study on the Effects of Hydrogen on Transparent Conducting Oxide Etching

[17a-313-9] Fabrication of Ge Fin Structure by Neutral Beam Etching

[17a-313-10] Surface Reaction Analysis of SiN Etching with Hydrogen Radicals using MD Simulation

Authentication

Session information

[17a-313-1~10] 8.4 Plasma etching

[17a-313-1] Etching of amorphous carbon layer (a-C) by fluorine and fluorocarbon ions (F+, CF+, CF3+)

[17a-313-2] Syntheses of nano-crystals on Si substrates in etch process of CF4/Ar plasmas

△ [17a-313-3] Fluorocarbon radical behavior of synchronized dc-imposed pulsed plasmas for advanced dielectric etching processes

△ [17a-313-4] Study on properties of hydrofluorocarbon gas plasma and etch performances of dielectric films

[17a-313-5] Effects of Additive Gases on Characteristics of Low Damage Plasma Etchingof GaN in Cl2 Based Plasma at High Temperature

△ [17a-313-6] Ag film etching by using halogen gas plasma

[17a-313-7] Effects of He+ ion irradiation on the Etching of Transparent Conduction Oxides

△ [17a-313-8] First Principle Study on the Effects of Hydrogen on Transparent Conducting Oxide Etching

[17a-313-9] Fabrication of Ge Fin Structure by Neutral Beam Etching

[17a-313-10] Surface Reaction Analysis of SiN Etching with Hydrogen Radicals using MD Simulation

Authentication

[17a-313-1] Etching of amorphous carbon layer (a-C) by fluorine and fluorocarbon ions (F⁺, CF⁺, CF₃⁺)

[17a-313-2] Syntheses of nano-crystals on Si substrates in etch process of CF₄/Ar plasmas

[17a-313-5] Effects of Additive Gases on Characteristics of Low Damage Plasma Etching
of GaN in Cl2 Based Plasma at High Temperature

[17a-313-7] Effects of He⁺ ion irradiation on the Etching of Transparent Conduction Oxides