[17a-503-1~13] 15.4 III-V-group nitride crystals

[17a-503-10] Mask pattern dependence on growth of GaN using facet controlling technique by hydride vapor phase epitaxy

〇kota yukizane¹, Shin Goubara¹, Satoru Fujimoto¹, Tohoru Matsubara¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamguchi Univ.)

Keywords:HVPE, GaN