[17a-503-1~13] 15.4 III-V-group nitride crystals

[17a-503-9] Realization of GaN-template with low wafer-bowing and low dislocation density by both-side HVPE growth

〇Hajime Fujikura¹, Taichiro Konno¹ (1.SCIOCS)

Keywords:GaN, HVPE, both-side growth

GaN templates on sapphire substrates with large GaN thicknesses (30-80um) were successfully realized by both-side HVPE growth. They possessed low dislocation densities (in the order of 1x10⁶/cm²) and low wafer-bowings (<100um) and thus were suitable for practical device applications. A wafer breakage by such a thick GaN growth was avoided by growth of clevage free poly-crystalline GaN on the backside prior to the crystalline GaN growth on the front-side.