[17a-503-1~13] 15.4 III-V-group nitride crystals

[17a-503-8] Growth of high purity GaN layer by HVPE

〇Hajime Fujikura¹, Fumimasa Horikiri¹ (1.SCIOCS)

Keywords:GaN, HVPE, impurity concentration

Highly-pure GaN epitaxial layers were successfully grown by a quart-free HVPE system. All impurity concentrations measured by SIMS (Si, O, C, H, Fe, Cr, Ni, Ti etc.) were below the detection limit. The high-purity layers displayed an insulating nature in the absence of a dopant; by Si doping, the electron concentration could be controlled over a wide range, down to 1x10¹⁵/cm³.