12:15 PM - 12:30 PM
△ [17a-503-13] Hydride Vapor Phase Epitaxy of Thick GaN Layers on ScAlMgO4 Substrates and their Self-Separation Process
Keywords:Nitride Semiconductor, Hydride Vapor Phase Epitaxy, GaN
ScAlMgO4 (SCAM) has a small lattice mismatch to GaN, so the use of SCAM as a substrate for the growth of thick GaN has attracted attention for obtaining a GaN bulk crystal with a low threading dislocation density. In this study, hydride vapor phase epitaxy of thick GaN on SCAM substrates was demonstrated, and self-separation has been achieved by c-plane cleaving of SCAM.
When the thickness of GaN is ~160 µm, thick GaN has been separated from the SCAM substrate by applying an external stress. By increasing the growth thickness to ~320 μm, GaN was self-separated during the cooling down process, which is probably due to the thermal stress. The dark spot density of GaN/SCAM was as low as 3 × 107 cm−2, which was lower than that of GaN/Sapphire.
When the thickness of GaN is ~160 µm, thick GaN has been separated from the SCAM substrate by applying an external stress. By increasing the growth thickness to ~320 μm, GaN was self-separated during the cooling down process, which is probably due to the thermal stress. The dark spot density of GaN/SCAM was as low as 3 × 107 cm−2, which was lower than that of GaN/Sapphire.