[17a-B5-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17a-B5-10] Effects of Strain Compensation Layer with InAsSb Quantum Well using MOVPE

〇(M1)Keita Yoshimoto¹, Yuya Yamagata¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:mid infrared, Quantum Well

There are a lot of absorption lines of the molecular vibration of CO, CO2 and the hydrocarbon, and the infrared wavelength level is expected for sensor application using the light absorption in 3 ~ 5 µm. When I think about the heterostructure of the Type-I, AlAsSb is promising for InAsSb, wide bandgap materials for narrow bandgap materials covering this wavelength band. However, the device design, the flexibility of the manufacture had a problem that it was small because the combination of materials which could make the heterostructure of the thing and Type-I where there was not a board in GaSb and a wide grating constant range between InSb was limited. I examined introduction of the class of walls that use of the wall layer and change of raw materials, extension distorted to compensate for compression distorted of the well more gave AlGaAsSb which added Ga to III group materials in this study.