[17a-B5-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[17a-B5-11] As₂ pressure dependence of InAs growth on vicinal GaSb (001) substrate

〇Shigekazu Okumura¹, Shuichi Tomabechi¹, Ryo Suzuki¹, Koji Tsunoda¹, Junichi Kon¹, Hironori Nishino¹ (1.Fujitsu Lab. LTD)

Keywords:Gallium Antimonide, Indium arsenide, Molecular beam epitaxiy

The As₂ pressure dependence of InAs growth on vicinal GaSb (001) substrate by morecular beam epitaxiy was investigated. As a result, at a high As₂ pressure condition, dislocations were observed in InAs layer. As As₂ pressure was lowered, dislocation density was decreased, on the other hand, the pits were observed. When As₂ pressure was futher lowered, both dislocations and pits were disappeared. Strain analysis by TEM/FFTM revealed that the dislocaitons in InAs layer were originated to the transition layer at GaSb/InAs interface with relatively small lattice constant , and the transition layer became thinner as the As₂ pressure was lowered.