[17p-211-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

[17p-211-10] The effect of oxidants for AlO_x deposition by thermal ALD on surface passivation

Hiroaki Ichikawa¹, Isao Takahashi¹, 〇Noritaka Usami¹, Katsuhiko Shirasawa², Hidetaka Takato² (1.Nagoya Univ., 2.FREA, AIST)

Keywords:passivation, alumina, thermal ALD

We investigated impact of oxidants, H₂O and O₃, for thermal ALD of AlO_x on surface passivation of crystalline Si. Based on change of lifetimes before and after illumination, we clarified that formation of defect levels in AlO_x could be suppressed when one uses O₃ as oxidant, leading to realization of high carrier lifetime by stacking SiN_x:H/AlO_x.