[17p-211-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

[17p-211-8] An evaluation of field-effect passivation in AlO/Si layers with LTEM

〇Toshimitsu Mochizuki¹, Akira Ito², Katsuto Tanahashi¹, Hidetoshi Nakanishi², Iwao Kawayama³, Masayoshi Tonouchi³, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST, 2.SCREEN, 3.ILE, Osaka Univ.)

Keywords:passivation, terahertz emission, aluminum oxide

Laser Terahertz Emission Microscope (LTEM) is a technique that measure and map the laser-induced terahertz emission from semiconductors. This technique enables measuring the surface potential of passivated semiconductor surfaces and contribute to the optimization of fabrication processes. In this work, we measured laser-induced terahertz emission from SiN/AlO/p-Si structures with various thickness before and after annealing in forming gas. With increasing AlO thickness and thermal treatment, the inverted surface continuously turned into the accumulated surface.