Temperature dependence of Hall mobility in SiC MOSFETs

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 17, 2017 1:45 PM - 5:00 PM 301 (301)

4:30 PM - 4:45 PM

〇Takaaki Amano¹, Dai Okamoto¹, Shinsuke Harada², Tetsuo Hatakeyama², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ.Tsukuba, 2.AIST)

Keywords:Hall effect, SiC, MOSFET