〇YOSHIHITO KATSU¹, Hidenori Tsuji^1,2, Ayele Kidist Moges¹, Mitsuru Sometani^1,3, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd., 3.AIST)

3:45 PM - 4:00 PM

△ [17p-301-7] Enhanced oxynitridation at SiC/SiO₂ interface by using rare earth element

〇Ryota Sakuta¹, Hirohisa Hirai¹, Koji Kita¹ (1.The Univ. of Tokyo)

4:00 PM - 4:15 PM

[17p-301-8] Reduction of surface roughness in Ba-enhanced oxidized SiO₂/SiC structures by reducing the amount of Ba and oxidation temperature

〇Eigo Fujita¹, Masato Tanaka¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Simura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

△ [17p-301-9] Reduction of Hall Effect Mobility in SiC MOS Inversion Layer

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Amishiro Hiroyuki¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Takeharu Kuroiwa¹, Koji Kita², Satoshi Yamakawa¹ (1.Mitsubishi Electric, 2.Univ. of Tokyo)

4:30 PM - 4:45 PM

[17p-301-10] Temperature dependence of Hall mobility in SiC MOSFETs

〇Takaaki Amano¹, Dai Okamoto¹, Shinsuke Harada², Tetsuo Hatakeyama², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ.Tsukuba, 2.AIST)

4:45 PM - 5:00 PM

[17p-301-11] Duty ratio dependence of charge pumping characteristics in SiC MOSFETs with nitride gate oxides

〇Xukun Wang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. Tsukuba)

Session information

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-1] [Kashiko Kodate Award Speech] Study on gate insulator process for reducing on-resistance in SiC trench MOSFET

[17p-301-2] Impact of wet-oxidation condition on interface state density and bias stress instability of SiO₂/4H-SiC m-face interface formed by dry- and wet-oxidation

△ [17p-301-3] Kinetic difference between the changes of interface defect density and oxide trap density during wet oxidation observed in the grown-thickness dependence of 4H-SiC C-face MOS characteristics

[17p-301-4] Study on the Effects of Coexisting O₂ on Wet Oxidation of 4H-SiC Si-face Based on the Changes of Oxidation Rate

[17p-301-5] Enhancement of 4H-SiC MOSFET mobility by the near-interface oxide growth in O₂-coexisting H₂O ambient

△ [17p-301-6] Electrical Characteristics of 4H-SiC(0001) MOSFETs with Gate Oxides Formed at Extreme Oxidation Conditions

△ [17p-301-7] Enhanced oxynitridation at SiC/SiO₂ interface by using rare earth element

[17p-301-8] Reduction of surface roughness in Ba-enhanced oxidized SiO₂/SiC structures by reducing the amount of Ba and oxidation temperature

△ [17p-301-9] Reduction of Hall Effect Mobility in SiC MOS Inversion Layer

[17p-301-10] Temperature dependence of Hall mobility in SiC MOSFETs

[17p-301-11] Duty ratio dependence of charge pumping characteristics in SiC MOSFETs with nitride gate oxides

Authentication

Session information

[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-1] [Kashiko Kodate Award Speech] Study on gate insulator process for reducing on-resistance in SiC trench MOSFET

[17p-301-2] Impact of wet-oxidation condition on interface state density and bias stress instability of SiO2/4H-SiC m-face interface formed by dry- and wet-oxidation

△ [17p-301-3] Kinetic difference between the changes of interface defect density and oxide trap density during wet oxidation observed in the grown-thickness dependence of 4H-SiC C-face MOS characteristics

[17p-301-4] Study on the Effects of Coexisting O2 on Wet Oxidation of 4H-SiC Si-face Based on the Changes of Oxidation Rate

[17p-301-5] Enhancement of 4H-SiC MOSFET mobility by the near-interface oxide growth in O2-coexisting H2O ambient

△ [17p-301-6] Electrical Characteristics of 4H-SiC(0001) MOSFETs with Gate Oxides Formed at Extreme Oxidation Conditions

△ [17p-301-7] Enhanced oxynitridation at SiC/SiO2 interface by using rare earth element

[17p-301-8] Reduction of surface roughness in Ba-enhanced oxidized SiO2/SiC structures by reducing the amount of Ba and oxidation temperature

△ [17p-301-9] Reduction of Hall Effect Mobility in SiC MOS Inversion Layer

[17p-301-10] Temperature dependence of Hall mobility in SiC MOSFETs

[17p-301-11] Duty ratio dependence of charge pumping characteristics in SiC MOSFETs with nitride gate oxides

Authentication

[17p-301-2] Impact of wet-oxidation condition on interface state density and bias stress instability of SiO₂/4H-SiC m-face interface formed by dry- and wet-oxidation

[17p-301-4] Study on the Effects of Coexisting O₂ on Wet Oxidation of 4H-SiC Si-face Based on the Changes of Oxidation Rate

[17p-301-5] Enhancement of 4H-SiC MOSFET mobility by the near-interface oxide growth in O₂-coexisting H₂O ambient

△ [17p-301-7] Enhanced oxynitridation at SiC/SiO₂ interface by using rare earth element

[17p-301-8] Reduction of surface roughness in Ba-enhanced oxidized SiO₂/SiC structures by reducing the amount of Ba and oxidation temperature