[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[17p-301-5] Enhancement of 4H-SiC MOSFET mobility by the near-interface oxide growth in O₂-coexisting H₂O ambient

〇(DC)Hirohisa Hirai¹, Koji Kita¹ (1.The. Univ. of Tokyo)

Keywords:SiC, mobility, wet oxidation

For the improvement of 4H-SiC/SiO₂ interface quality, the impacts of hybrid oxidation process in O₂-coexisting H₂O ambient annealing was investigated. Employing hybrid oxidation at relatively low 800^oC, limited oxidation only at the interface region resulted in both the enhancement of MOSFET mobility and the suppression of the degradation of voltage-induced instability characteristics.