[17p-313-1~16] 8.7 Plasma phenomena, emerging area of plasmas and their new applications

[17p-313-1] Low-Energy Mass-Selected Ion Beam Production of Fragments Produced from Hexamethyldisilane for SiC Film Formation

〇Satoru Yoshimura¹, Satoshi Sugimoto¹, Masato Kiuchi^1,2 (1.Osaka Univ., 2.AIST)

Keywords:SiC, Hexamethyldisilane, fragment

Now, we are trying to deposit films on substrates by means of the irradiation of fragment ions produced through source gas decomposition. In this study, we have selected a silicon carbide (SiC) film deposition on Si substrate using hexamethyldisilane (HMD) as an experimental model. The successful epitaxial growth of SiC has been carried using silane, monomethylsilane (MMS), or dimethylsilane (DMS). Silane, MMS, or DMS are extremely flammable. On the contrary, hexamethyldisilane is relatively secure to handle, because it is less flammable than the above three gases. In this paper, we have confirmed that the mass-selected fragment ions obtained from HMD could be useful for the secure epitaxial growth of SiC.