[17p-419-1~10] 6.3 Oxide electronics

▲ [17p-419-2] A 3D Structural Study of Hydrogenated and Non-hydrogenated Amorphous In-Ga-Zn-O Thin Films

〇(PC)Rosantha Kumara¹, Osami Sakata¹, Kyohei Ishikawa^2,3, Shinji Kohara¹, Hidenori Hiramatsu^2,3, Hideo Hosono^2,3, Toshio Kamiya^2,3 (1.NIMS/SPring-8, 2.MSL Tokyo Tech, 3.MCES Tokyo Tech)

Keywords:a-IGZO, Oxide semiconductor, Atomic-scale structure

The three-dimensional atomic-scale structure of amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin films with different impurity hydrogen were studied by High-Energy X-ray Diffraction (HEXRD) combined with fluorescence Extended X-Ray Absorption Fine Structure (EXAFS) data, atomic Pair Distribution Function (PDF) analysis, and Reverse Monte Carlo (RMC) modeling methods. Here we prepared a-IGZO films using a polycrystalline InGaZnO₄ target at room temperature with standard (STD, the base pressure ~10^-4 Pa) and ultrahigh vacuum (UHV, ~10^-7 Pa) radio frequency magnetron sputtering systems with different oxygen-containing atmospheres. From the structural models generated by RMC, we obtained significant different partial pair correlation function, g(r), for STD and UHV a-IGZO films. The present HEXRD coupled to the atomic-PDF and RMC structure-modeling methods distinguishes different atomic scale structures of a-IGZO films with different impurity hydrogen.