The quantification of photo-excited carrier concentration in light emitting diodes by combining the absolute absorptivity and photocurrent measurements

Shigeyoshi Usami; Kazunobu Kojima; Maki Kushimoto; Manato Deki; Shugo Nitta; Yoshio Honda; Shigefusa Chichibu; Hiroshi Amano

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-503-1~10] 15.4 III-V-group nitride crystals

Fri. Mar 17, 2017 1:45 PM - 4:30 PM 503 (503)

Munetaka Arita(Univ. of Tokyo), Mark Holmes(The University of Tokyo)

3:45 PM - 4:00 PM

[17p-503-8] The quantification of photo-excited carrier concentration in light emitting diodes by combining the absolute absorptivity and photocurrent measurements

〇Shigeyoshi Usami¹, Kazunobu Kojima², Maki Kushimoto¹, Manato Deki³, Shugo Nitta³, Yoshio Honda³, Shigefusa Chichibu^2,3, Hiroshi Amano^3,4,5 (1.Nagoya Univ., 2.IMRAM-Tohoku Univ., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ. ARC, 5.NU VBL)

Keywords:III nitride semiconductors, LED, Excited carrier concetration