Shigeyoshi Usami

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

3:00 PM - 3:15 PM

△ [14p-315-8] Relationship between dislocations and leakage current of p-n diodes on free-standing GaN substrate

〇Shigeyoshi Usami¹, Yuto Ando¹, Atsushi Tanaka², Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ. ARC, 4.NU VBL)

Fri. Mar 17, 2017 1:45 PM - 4:30 PM 503 (503)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[17p-503-1~10] 15.4 III-V-group nitride crystals

3:45 PM - 4:00 PM

[17p-503-8] The quantification of photo-excited carrier concentration in light emitting diodes by combining the absolute absorptivity and photocurrent measurements

〇Shigeyoshi Usami¹, Kazunobu Kojima², Maki Kushimoto¹, Manato Deki³, Shugo Nitta³, Yoshio Honda³, Shigefusa Chichibu^2,3, Hiroshi Amano^3,4,5 (1.Nagoya Univ., 2.IMRAM-Tohoku Univ., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ. ARC, 5.NU VBL)

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