[17p-P3-1~22] 15.4 III-V-group nitride crystals

△ [17p-P3-15] Effects of thicknesses of seed substrates on GaN-wafer fabricated using the sapphire dissolution technique during the Na-flux growth.

〇(M2)Takumi Yamada¹, Kosuke Murakami¹, Kosuke Nakamura¹, Hiroki Imabayashi¹, Masatomo Honjo¹, Keisuke Kakinouchi¹, Kenta Harimiya¹, Tomoko Kitamura¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Grad. Sch. of Eng. Osaka Univ.)

Keywords:Na-flux method