Examination of narrow pitch pattern process at GaN double polarity selective area growth using MOVPE

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Mar 17, 2017 1:30 PM - 3:30 PM P3 (BP)

1:30 PM - 3:30 PM

〇Hirotaka Yagi¹, Noriyuki Osumi¹, Yoku Inoue¹, Takayuki Nakano¹ (1.Shizuoka Univ.)

Keywords:MOVPE, polarity, selective area growth