[17p-P3-1~22] 15.4 III-V-group nitride crystals

[17p-P3-22] Theoretical investigations for polarity inversion of AlN and GaN films on AlN(000-1) substrate

〇Motoshi Uchino¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

Keywords:nitride semiconductor, polarity inversion, ab initio calculation