[17p-P3-1~22] 15.4 III-V-group nitride crystals

[17p-P3-5] The Growth of InN on Graphite Substrate by RF-MBE

〇(B)Shingo Arakawa¹, Yuuto Kubonaka¹, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Keywords:Indium Nitride, Epitaxial Growth, Layered Materials

In this study, we demonstrated MBE growth of InN on graphite substrate, on which dislocation free crystal growth can be possible due to the absence of out-plane direction dangling bond. We confirmed ~300nm InN hexagonal columns were grown on the graphite unlike on the GaN template. The size, shape and density of hexagonal columns are different depending on the growth temperature. The control of crystal growth by growth time or V/III supply ratio will be also discussed in the presentation.