[17p-P3-1~22] 15.4 III-V-group nitride crystals

[17p-P3-9] Mg recoil implantation into GaN with incident Nitrogen ion

〇Toshikazu Yamada¹, Noriyuki Taoka¹, Tokio Takahashi², Mitsuaki Shimizu¹ (1.GaN-OIL AIST, 2.AIST)

Keywords:recoil implantation, GaN

It is quite difficult to prepare P-type GaN by ion implantation of Mg. The incident Mg ions give severe damage to the matrix. The damage of GaN bulk is difficult to recover by a heat treatment. Therefore, we have demonstrated the lowering of the damage by using a so-called recoil implantation method. We use Nitrogen ion as an incident beam. And Mg-doped GaN layer is deposited on the undoped-GaN layer as Mg source layer. We found that the recoiled Mg atoms in the undoped-GaN penetrated into the bulk GaN.