The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-P3-1~22] 15.4 III-V-group nitride crystals

Fri. Mar 17, 2017 1:30 PM - 3:30 PM P3 (BP)

1:30 PM - 3:30 PM

[17p-P3-10] Growth of AlN films by DC reactive sputtering method using high-vacuum sputtering apparatus

Masatoshi Itoh1, Shigeru Saito1 (1.Tokyo Univ. of Sci.)

Keywords:Aluminum nitride, sputtering