13:30 〜 14:00
▲ [19p-CE-2] Crystal plane dependence of interface states density in c- and m-plane GaN MOS capacitors
〇Manato Deki1、Yuto Ando2、Hirotaka Watanabe1、Atsushi Tanaka1,3、Maki Kushimoto2、Shugo Nitta1、Yoshio Honda1、Hiroshi Amano1,4,5 (1.IMaSS Nagoya Univ.、2.Nagoya Univ.、3.NIMS、4.ARC、5.Nagoya Univ. VBL)