Masashi Kato

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:30 PM 141 (141+142)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

9:45 AM - 10:00 AM

[21a-141-4] Surface recombination velocities for the Si- and C-faces of 4H-SiC: re-examination through experimental and analytical accuracy improvements

〇Masashi Kato¹, Xinchi Zhang¹, Kimihiro Kohama¹, Masaya Ichimura¹ (1.NITech)