Takeshi Nishida

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 9:30 AM - 11:45 AM 235 (3Ｆ_Lounge２)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[18a-235-1~9] 15.5 Group IV crystals and alloys

11:15 AM - 11:30 AM

[18a-235-8] Formation of a large-grained GaAs film using Al-induced crystallized Ge as a seed layer

〇Takeshi Nishida¹, Masaya Saito¹, Kenta Moto¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)