Shogo Fukami

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 1:15 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[18p-235-1~14] 15.5 Group IV crystals and alloys

4:45 PM - 5:00 PM

[18p-235-14] Effect of cooling rate and annealing temperature on epitaxial growth of SiGe on Si substrate by printing and firing

〇Shogo Fukami¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Masahiro Nakahara², Marwan Dhamrin², Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Aluminium)

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