Hidetaka Sofue

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 1:15 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[18p-235-1~14] 15.5 Group IV crystals and alloys

1:30 PM - 1:45 PM

[18p-235-2] Enhancement of Strain-relaxation for Ge₁_-_x_-_ySi_xSn_y Epitaxial Layer Using Ion-implanted Ge Substrate

〇Hidetaka Sofue¹, Masahiro Fukuda¹, Osamu Nakatsuka^1,2, Shigeaki Zaima³ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.IIFS, Nagoya Univ.)