Hideaki Matsuyama

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PA (Event Hall)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[18p-PA6-15] Evaluation of Ga-oxide layers on GaN layer surface and MOS interface by XPS

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Daisuke Mori¹, Hirotaka Suda¹, Masaharu Edo¹ (1.Fuji Electric)

4:00 PM - 6:00 PM

[18p-PA6-16] CV characteristics of p-GaN/SiO2 MOS capacitors

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Yuta Fukushima¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Yamanashi Univ.)

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