Ryota Ando

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Speaker, Author, Co-Author

Tue. Sep 18, 2018 4:00 PM - 6:00 PM PA (Event Hall)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-PA6-1~30] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[18p-PA6-21] Characteristics of SiO₂ / GaN Interface with Gallium Oxide Layer
by High Pressure Water Vapor Annealing

〇Ryota Ando¹, Mutsunori Uenuma¹, Masaaki Furukawa¹, Tengda Lin¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)