Makoto Hashikawa

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 9:30 AM - 11:30 AM 224A (224-1)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:00 AM - 10:15 AM

[19a-224A-3] Estimation of electric field in β-Ga₂O₃-based MOS photodiodes

〇Makoto Hashikawa¹, Sansei Tomizawa¹, Kohei Sasaki², Akihito Kuramata², Toshiyuki Oishi¹, Takayoshi Oshima¹ (1.Saga Univ., 2.Tamura Corp. & NCT, Inc)