Takafumi Negi

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

4:45 PM - 5:00 PM

[19p-131-12] Measurement of depth profile for hydrogen in Silicon Substrate using Deep Level Transient Spectroscopy Method. ~Behavior of hydrogen in wet process~

〇Takafumi Negi¹, Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)