Hiroaki Hanafusa

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

5:30 PM - 5:45 PM

[19p-CE-13] Activation of Magnesium implanted in Ga-face GaN layer by Atmospheric Pressure Thermal-Plasma-Jet Irradiation

〇Hiroaki Hanafusa¹, Seiichiro Higashi¹, Koji Shiozaki² (1.Hiroshima Univ., 2.Nagoya Univ.)