Masahiro Takahashi

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

6:30 PM - 6:45 PM

△ [19p-CE-17] Characterizations of Mg ion implantation in GaN at high-temperature

〇Masahiro Takahashi¹, Atsushi Tanaka^2,3, Shigeyoshi Usami¹, Yuto Ando¹, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMASS, 3.NIMS, 4.Nagoya Univ. ARC, 5.NU VBL)

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