Keisuke Uemura

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 1:00 PM - 2:45 PM CE (Century Hall)

Symposium (Oral)
| Symposium
| JSAP-KPS Joint Symposium: Wide Bandgap Semiconductor Devices

[19p-CE-1~4] JSAP-KPS Joint Symposium: Wide Bandgap Semiconductor Devices

2:30 PM - 2:45 PM

▲ [19p-CE-4] Recessed-gate AlGaN/GaN High Electron Mobility Transistors (HEMTs) Prepared by Photo-electrochemical Etching and Post-metallization Annealing

〇Keisuke Uemura¹, Manato Deki², Yoshio Honda², Hiroshi Amano², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.IMaSS, Nagoya Univ.)