Hajime Fujikura

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 3:00 PM - 6:45 PM CE (Century Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

3:00 PM - 3:30 PM

[19p-CE-5] [JSAP Paper Award Speech] Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

〇Hajime Fujikura¹, Taichiro Konno¹, Takehiro Yoshida¹, Fumimasa Horikiri¹ (1.SCIOCS)