Ryo Sugiura

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 1:30 PM - 3:30 PM PA (Event Hall)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19p-PA4-1~27] 15.4 III-V-group nitride crystals

1:30 PM - 3:30 PM

[19p-PA4-14] Growth of N-polar GaN on 4H-SiC (000
1
) substrate by RF-MBE

〇(M2)Ryo Sugiura¹, Kengo Takamiya¹, Syuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)