Takuma Doi

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:30 PM 141 (141+142)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

10:00 AM - 10:15 AM

△ [20a-141-5] Improvement of interface properties of Al₂O₃/SiC by post oxygen radical treatment

〇Takuma Doi^1,2, Wakana Takeuchi³, Mitsuo Sakashita¹, Shigehisa Shibayama¹, Noriyuki Taoka², Osamu Nakatsuka^1,4, Shigeaki Zaima⁵ (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.AIT, 4.IMaSS, Nagoya Univ., 5.IIFS, Nagoya Univ.)