10:30 AM - 10:45 AM △ [20a-141-7] 400°C operation of normally-off n- and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate 〇(M1)Masashi Nakajima1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)