Shuang Gao

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:15 PM CE (Century Hall)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices and related technologies

[20a-CE-1~12] 13.5 Semiconductor devices and related technologies

9:15 AM - 9:30 AM

▼ [20a-CE-2] Reduced Subthreshold Slope Variability at High Temperature in Bulk and SOTB MOSFETs

〇(M2)Shuang Gao¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

9:30 AM - 9:45 AM

▲ [20a-CE-3] Reduced Drain-Induced-Barrier-Lowering (DIBL) Variability at High Temperature in Bulk and SOTB MOSFETs

〇(M2)Shuang Gao¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)