Keichi Osada

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

4:15 PM - 4:30 PM

△ [20p-221C-10] Exploration of condition for grinding SiC by Beyesian optimization

〇(M1)Keichi Osada^1,2, Yosuke Tsunooka^1,2,3, Kiyoshi Narita⁴, Koizumi Haruhiko^1,2, Kentaro Kutsukake⁵, Harada Shunta^1,2, Miho Tagawa^1,2, Toru Ujihara^1,2,3 (1.Grad. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.AIST GaN-OIL, 4.Nitolex Corp., 5.Inst. Innov. Fut. Soc., Nagoya Univ.)

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