Ryohei Kawasaki

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

4:45 PM - 5:00 PM

[20p-221C-11] Improvement of etching rate profile of 4H-SiC wafer by using ClF₃ gas

Syogo Okuyama¹, 〇Ryohei Kawasaki¹, Kurashima Keisuke¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo Co., Ltd, 3.AIST)