Keisuke Kurashima

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

5:00 PM - 5:15 PM

[20p-221C-12] Development of SiC Epitaxial Reactor Cleaning Process Using Chlorine Trifluoride Gas -Evaluation of Purified Pyrolytic Carbon as Susceptor Coating Material-

〇Keisuke Kurashima¹, Hitoshi Habuka¹, Hideki Ito², Shinichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

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