Seiki Kawasaki

→ Search for Seiki Kawasaki in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

2:00 PM - 2:15 PM

[20p-221C-2] Millisecond Annealing for High Speed Activation of Impurity in 4H-SiC Wafer by Nitrogen-boosted Atmospheric Pressure Thermal Plasma Jet

〇(M1)Seiki Kawasaki¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Universiy. ADSM)