Daichi Todo

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

2:15 PM - 2:30 PM

[20p-221C-3] Investigation on Contact Characteristics of n-type 4H-SiC with Silicon-Cap-Annealing

〇(M1)Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)