Tomohiro Ambe

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM

[20p-221C-5] Performance improvement of 3C-SiC photoelectrodes by surface area expansion

〇(M2)Tomohiro Ambe¹, Masashi Kato¹ (1.Nagoya Inst.)