Haruka Kamamoto

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

3:45 PM - 4:00 PM

[20p-221C-8] Dislocation Characteristics of SiC Single Crystal Substrates Investigated by Means of Bright-Field X-ray Topography under Multiple-Diffraction Conditions

〇Haruka Kamamoto¹, Yu Fujita¹, Hiroyuki Mizuochi¹, Yoshiyuki Tsusaka^1,2, Junji Matsui² (1.Grad. Sch. of Material Sci.Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Center, Univ. of Hyogo)

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