Dianne Cabrejas Corsino

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM

▼ [20p-234A-12] Effect of Atomic Layer Deposition Temperature on the Electrical Characteristics of Al₂O₃-passivated Amorphous InGaZnO Thin-Film Transistors

〇(M2)Dianne Cabrejas Corsino¹, Juan Paolo Bermundo¹, Mami Fujii¹, Kiyoshi Takahashi², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Nippon Aluminum Alkyls, Ltd.)