Kazunori Kurishima

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:45 PM - 6:00 PM

△ [20p-234A-16] Reliability of In_1-xSi_xO_1-yC_y thin-film transistors with an Al₂O₃ passivation layer under NBIS

〇(D)Kazunori Kurishima^1,2,3, Toshihide Nabatame², Takashi Onaya^1,2,3, Kazuhito Tsukagoshi², Akihiko Ohi², Naoki Ikeda², Takahiro Nagata², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.JSPS DC)