Aimi Syairah Safaruddin

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

6:00 PM - 6:15 PM

▼ [20p-234A-17] Highly Reliable Low Temperature (180℃) Solution Processed Passivation for Amorphous Solution Processed In-Zn-O Thin-Film Transistors

〇(M1)Aimi Syairah Safaruddin¹, Juan Paolo Bermundo¹, Naofumi Yoshida², Toshiaki Nonaka², Mami Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Merck Performance Materials Ltd.)

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